BFY180 semiconductor group 1 of 5 draft b, september 99 hirel npn silicon rf transistor ? hirel discrete and microwave semiconductor ? for low power amplifiers at collector currents from 0,2 ma to 2,5 ma. ? hermetically sealed microwave package ? f t = 6,5 ghz f = 2.6 db at 2 ghz ? space qualified esa/scc detail spec. no.: 5611/006 type variant no. 01 esd : e lectro s tatic d ischarge sensitive device, observe handling precautions! type marking ordering code pin configuration package BFY180 (ql) - see below c ebemicro-x1 (ql) quality level: p: professional quality, ordering code: q97301013 h: high rel quality, ordering code: on request s: space quality, ordering code: on request es: esa space quality, ordering code: q97111419 (see order instructions for ordering example) 12 3 4
BFY180 semiconductor group 2 of 5 draft b, september 99 maximum ratings parameter symbol values unit collector-emitter voltage v ceo 8v collector-emitter voltage, v be =0 v ces 15 v collector-base voltage v cbo 15 v emitter-base voltage v ebo 2v collector current i c 4ma base current i b 0.5 1) ma total power dissipation, t s 176c 2), 3) p tot 30 mw junction temperature t j 200 c operating temperature range t op -65...+200 c storage temperature range t stg -65...+200 c thermal resistance junction-soldering point 3) r th js < 805 k/w notes.: 1) the maximum permissible base current for v fbe measurements is 3ma (spot- measurement duration < 1s) 2) at t s = + 176 c. for t s > + 176 c derating is required. 3) t s is measured on the collector lead at the soldering point to the pcb. electrical characteristics at t a =25c; unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-base cutoff current v cb = 10 v, i e = 0 i cbo - - 100 a collector-emitter cutoff current v ce = 8 v, i b = 0,05a 1.) i cex -- 50a collector-base cutoff current v cb = 8 v, i e = 0 i cbo - - 50 na emitter base cuttoff current v eb = 2 v, i c = 0 i ebo -- 25 a emitter base cuttoff current v eb = 1 v, i c = 0 i ebo -- 0.5 a notes: 1.) this test assures v(br) ce0 > 8v
BFY180 semiconductor group 3 of 5 draft b, september 99 electrical characteristics (continued) parameter symbol values unit min. typ. max. dc characteristics base-emitter forward voltage i e = 3 ma, i c = 0 v fbe -- 1v dc current gain i c = 0,25 ma, v ce = 1 v h fe 30 100 175 - ac characteristics transition frequency i c = 2 ma, v ce = 5 v, f = 500 mhz f t 5,5 6.5 - ghz collector-base capacitance v cb = 5 v, v be = vbe = 0, f = 1 mhz c cb - 0.15 0.24 pf collector-emitter capacitance v ce = 5 v, v be = vbe = 0, f = 1 mhz c ce -0.34-pf emitter-base capacitance v eb = 0.5v, v cb = vcb = 0, f = 1 mhz c eb - 0.25 0.4 pf noise figure i c = 2 ma, v ce = 5 v, f = 2 ghz, z s = z sopt f - 2.6 3.2 db power gain i c = 2 ma, v ce = 5v, f = 2 ghz z s = z sopt , z l = z lopt gma 1.) 12 13.5 - db transducer gain i c = 2 ma, v ce = 5 v, f = 2 ghz z s = z l = 50 ? |s 21e | 2 6.5 8 - db notes.: 1) g s s kk ma =?? 21 12 1 2 () , g s s ms = 21 12
BFY180 semiconductor group 4 of 5 draft b, september 99 order instructions: full type variant including quality level must be specified by the orderer. for hirel discrete and microwave semiconductors the ordering code specifies device family and quality level. ordering form: ordering code: q.......... BFY180 (ql) (ql): quality level ordering example: ordering code: q97111419 BFY180 es for BFY180 in esa space quality level further informations: see our www-pages: - discrete and rf-semiconductors (small signal semiconductors) www.infi neon.com/products/discrete/hirel.htm - hirel discrete and microwave semiconductors www.infi neon.com/products/discrete/hirel.htm please contact also our marketing division : tel.: ++89 234 24480 fax.: ++89 234 28438 e-mail: martin.wimmers@infineon.com address: infineon technologies semiconductors, high frequency products marketing, p.o.box 801709, d-81617 munich
BFY180 semiconductor group 5 of 5 draft b, september 99 micro-x1 package 1 2 3 4 published by infineon technologiessemiconductors, high frequency products marketing, p.o.box 801709, d-81617 munich. infineon technologies ag 1998. all rights reserved. as far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. the information describes the type of component and shall not be considered as assured characteristics. terms of delivery and rights to change design reserved. for questions on technology, delivery and prices please contact the offices of semiconductor group in germany or the infineon technologies companies and representatives woldwide (see address list). due to technical requirements components may contain dangerous substances. for information on the type in question please contact your nearest infineon technologies office, semiconductor group. infineon technologies semiconductors is a certified cecc and qs9000 manufacturer (this includes iso 9000).
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